? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 600 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 40 a, v ge = 15 v 1.6 2.0 v note 1 t j = 125 c 1.5 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i f110 t c = 110 c (50n60b2d1 diode) 38 a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque, to-264 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? high frequency igbt and anti-parallel fred in one package ? high current handling capability ? mos gate turn-on for drive simplicity ? fast recovery epitaxial diode (fred) with soft recovery and low i rm applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? dc choppers ? ac motor speed control ? dc servo and robot drives advantages ? space savings (two devices in one package) ? easy to mount with 1 screw g c e to-264 (ixgk) ds99146a(03/04) plus247 (ixgx) v ces = 600 v i c25 = 75 a v ce(sat) = 2.0 v t fi(typ) = 65 ns (tab) (tab) ixgk 50n60b2d1 ixgx 50n60b2d1 b2-class high speed igbts advance technical data c e
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40 a; v ce = 10 v, 40 55 s note 1 c ies 3500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 220 pf c res 50 pf q g 140 nc q ge i c = 40 a, v ge = 15 v, v ce = 0.5 v ces 23 nc q gc 44 nc t d(on) 18 ns t ri 25 ns t d(off) 190 300 ns t fi 65 ns e off 0.55 0.85 mj t d(on) 18 ns t ri 25 ns e on 0.9 mj t d(off) 290 ns t fi 140 ns e off 1.55 mj r thjc 0.31 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 5.0 ? inductive load, t j = 125 c i c = 40 a, v ge = 15 v v ce = 480 v, r g = r off = 5.0 ? plus247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) ixgk 50n60b2d1 ixgx 50n60b2d1 to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60 a, v ge = 0 v, 2.1 v note 1 t j = 150 c 1.4 i rm i f = 60 a, v ge = 0 v, -di f /dt = 100 a/ s t j = 100 c 8.3 a v r = 100 v t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 n s r thjc 0.65 k/w note 1: pulse test, t 300 s, duty cycle 2 %
? 2004 ixys all rights reserved ixgk 50n60b2d1 ixgx 50n60b2d1 fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 012345678 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 15v 13v 11v 6v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0.5 1 1.5 2 2.5 3 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 6v 9v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 40a i c = 20a v ge = 15v i c = 80a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 567891011121314151617 v g e - volts v c e - volts t j = 25oc i c = 80a 40a 20a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgk 50n60b2d1 ixgx 50n60b2d1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off en e r g y o n r g 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5 101520253035404550 r g - ohms e off - millijoules i c = 20a t j = 125oc v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 9. dependence of turn-off en e r g y on i c 0 0.5 1 1.5 2 2.5 3 3.5 4 20 30 40 50 60 70 80 i c - amperes e off - millijoules r g = 5 ? r g = 24.4 ? - - - - v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 80a r g = 5 ? r g = 24.4 ? - - - v ge = 15v v ce = 480v i c = 40a i c = 20a fig. 11. dependence of turn-off sw itching time on r g 100 1000 5 10152025 3035404550 r g - ohms switching time - nanosecond i c = 40a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 20a i c = 80a 500 fig. 12. dependence of turn-off sw itching tim e on i c 0 50 100 150 200 250 300 350 400 20 30 40 50 60 70 80 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved fig. 15. gate charge 0 2 4 6 8 10 12 14 16 0306090120150 q g - nanocoulombs v g e - volts v ce = 300v i c = 40a i g = 10ma fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanosecond t d(off) t fi - - - - - - r g = 5 ? v ge = 15v v ce = 480v i c = 40a i c = 80a i c = 20a fig. 14. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w ixgk 50n60b2d1 ixgx 50n60b2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixgk 50n60b2d1 ixgx 50n60b2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 60-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100c v r = 300v t vj = 100c i f = 60a fig. 20. peak reverse current i rm versus -di f /dt fig. 19. reverse recovery charge q r versus -di f /dt fig. 18. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 21. dynamic parameters q r , i rm versus t vj fig. 22. recovery time t rr versus -di f /dt fig. 23. peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 24. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385 t vj = 25c t vj =150c t vj =100c note: fig. 18 through fig. 23 show typical values
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